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Tsubouchi, Masaaki; Kumada, Takayuki
no journal, ,
Collision reaction concerning the molecule which has the structure is very sensitive to the orientation between the molecules. Therefore, the observation of the molecular collision should be performed in the molecular fixed frame. To realize the molecular axis alignment in the space, we introduce the method to use the intense THz pulse train, and show the results of the numerical simulation.
/Ge gate stack with an EOT of 0.56 nm by controlling high-/Ge interface reaction using ultrathin AlO
interlayerTanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
no abstracts in English
Kondo, Masato; Kumada, Takayuki; Tsubouchi, Masaaki
no journal, ,
no abstracts in English
molecular beamIwai, Yutaro*; Teraoka, Yuden; Okada, Ryuta; Yoshigoe, Akitaka
no journal, ,
no abstracts in English
Au(110) using a hyperthermal O molecular molecular beamHashinokuchi, Michihiro*; Okada, Michio*; Tsuda, Yasutaka*; Makino, Takamasa*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
Ono, Shinya*; Abe, Sosuke*; Miura, Shu*; Narishige, Takuma*; Yoshigoe, Akitaka; Teraoka, Yuden; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
-FeSi
thin film by means of ion beam sputter deposition methodHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
Imazono, Takashi; Koike, Masato; Kawachi, Tetsuya; Hasegawa, Noboru; Koeda, Masaru*; Nagano, Tetsuya*; Sasai, Hiroyuki*; Oue, Yuki*; Yonezawa, Zeno*; Kuramoto, Satoshi*; et al.
no journal, ,
For study of the electronic structure of materials including rechargeable lithium ion batteries and solar cells by means of soft X-ray emission spectroscopy based on electron microscopes (EMs), an objective flat-field grating spectrograph are designed to have an expanded detection range of 50-4000 eV with high resolution compared to commercially available wavelength or energy dispersive X-ray spectrometer. We have divided the energy range into four ranges, i.e., (1) 50-200 eV, (2) 155-350 eV, (3) 300-2200 eV, and (4) 2000-4000 eV, and designed the dedicated laminar holographic varied-line-spacing gratings for the respective ranges. All gratings can be accommodated by a single retractable spectrograph. Therefore, the energy range can be easily selected by exchanging the gratings. Furthermore, especially for the range of (4), a grating coated with a newly invented wide band multilayer is developed to cover the whole energy range at a constant angle of incidence.
Kurashima, Satoshi; Miyawaki, Nobumasa; Okumura, Susumu
no journal, ,
no abstracts in English
Entani, Shiro; Matsumoto, Yoshihiro; Otomo, Manabu; Avramov, P.; Naramoto, Hiroshi*; Sakai, Seiji
no journal, ,
no abstracts in English
Sakaguchi, Yoshifumi*; Asaoka, Hidehito; Uozumi, Yuki; Kawakita, Yukinobu; Ito, Takayoshi*; Kubota, Masato; Yamazaki, Dai; Soyama, Kazuhiko; Ailavajhala, M.*; Lativ, M. R.*; et al.
no journal, ,
no abstracts in English
film deposited under 
UV light irradiationSakai, Seiji; Arai, Daijiro; Tanimoto, Hisanori*; Otomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro
no journal, ,
no abstracts in English
on Ge(100)-2
1 surface at room temperatureYoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
There is considerable interest in germanium as a channel material for developing Si devices because of its high carrier mobility. Thus, Ge oxides and its growth mechanism are attracting widespread interest. In this conference, we report on the dependence of adsorption processes in room-temperature oxidation at a Ge(100)-21 surface on translational energy of O clarified by the measurement of initial sticking probability. All experiments were performed using SUREAC2000 at BL23SU of SPring-8. It was found that adsorption mechanism changes around 0.1 eV. Furthermore, we found out two energy barriers for the adsorption of O with translational energy of 2.2 eV.
Kado, Masataka; Kishimoto, Maki; Tone, Shigenobu*; Tamotsu, Satoshi*; Yasuda, Keiko*; Aoyama, Masato*; Shinohara, Kunio*
no journal, ,
Laser plasma soft X-ray microscope, which is a contact type soft X-ray microscope coupled with a highly intense and short pulsed laser plasma soft X-ray source, has higher spatial resolution better than 100 nm and high temporal resolution shorter than 1 nm and it is possible to observe inner structures of live biological cells. We have developed the laser plasma soft X-ray microscope and have applied for various life science phenomenons especially apoptotic cell nuclei. It has been observed with transmission electron microscope and fluorescence microscope that chromatin which was usually folded in nucleus was condensed along nucleus membrane and changed its shape to ring, necklace, and finally collapses when the apoptosis occurred. However there are many things to be studied in order to understand detailed mechanism caused such apoptotic deformation. We have studied detailed structural deformation from ring to necklace which is important to understand apoptosis.
Otomo, Manabu; Avramov, P.; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Yamauchi, Yasushi*; Sakai, Seiji
no journal, ,
Hexagonal boron nitride (h-BN) is a promising insulating material for graphene spintronics. In this study, we utilized spin-polarized metastable de-excitation spectroscopy (SPMDS) in order to study spin and electronic states of h-BN on magnetic metal surfaces. The extreme surface sensitivity enabled us to elucidate the spin polarization of h-BN monolayer at Ni(111) contacts separately from that of Ni(111). The spin asymmetry of SPMDS spectra indicates that the h-BN is spin-polarized parallel to Ni majority spins. This result will give us insight into the characteristics of h-BN tunnel barriers in graphene spintronics.
-ray dose rate dosimeter with 4H-SiCFujita, Natsuko; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Deki, Manato*; Makino, Takahiro; Tomita, Takuro*; Kojima, Kazutoshi*; Oshima, Takeshi
no journal, ,
no abstracts in English
Hazama, Masatoshi*; Abo, Satoshi*; Wakaya, Fujio*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*
no journal, ,
no abstracts in English
) metal-oxide-semiconductor field effect transistorsArai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Makino, Takahiro; Deki, Manato*; Fujita, Natsuko; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English